? 2013 ixys corporation, all rights reserved ds100414a(11/13) ixfa20n50p3 ixfp20n50p3 ixfq20n50p3 IXFH20N50P3 polar3 tm hiperfet tm power mosfets n-channel enhancement mode avalanche rated fast intrinsic rectifier symbol test conditions maximum ratings v dss t j = 25 ? c to 150 ? c 500 v v dgr t j = 25 ? c to 150 ? c, r gs = 1m ? 500 v v gss continuous ? 30 v v gsm transient ? 40 v i d25 t c = 25 ? c 20 a i dm t c = 25 ? c, pulse width limited by t jm 40 a i a t c = 25 ? c10 a e as t c = 25 ? c 300 mj dv/dt i s ? i dm , v dd ? v dss , t j ? 150c 35 v/ns p d t c = 25 ? c 380 w t j -55 ... +150 ?? c t jm 150 ?? c t stg -55 ... +150 ?? c t l maximum lead temperature for soldering 300 c t sold plastic body for 10s 260 c f c mounting force 10..65/2.2..14.6 n/lb m d mounting torque 1.13 / 10 nm/lb.in weight to-263 2.5 g to-220 3.0 g to-3p 5.5 g to-247 6.0 g v dss = 500v i d25 = 20a r ds(on) ? ? ? ? ? 300m ? ? ? ? ? features ? fast intrinsic rectifier ? avalanche rated ? low r ds(on) and q g ? low package inductance advantages ? high power density ? easy to mount ? space savings applications ? switch-mode and resonant-mode power supplies ? dc-dc converters ? laser drivers ? ac and dc motor drives ? robotics and servo controls symbol test conditions characteristic values (t j = 25 ? c unless otherwise specified) min. typ. max. bv dss v gs = 0v, i d = 1ma 500 v v gs(th) v ds = v gs , i d = 1.5ma 3.0 5.0 v i gss v gs = ? 30v, v ds = 0v ??????????? 100 na i dss v ds = v dss , v gs = 0v 25 ? a t j = 125 ? c 1.25 ? ma r ds(on) v gs = 10v, i d = 0.5 ? i d25 , note 1 300 m ? g = gate d = drain s = source tab = drain to-247 (ixfh) g s d d (tab) d (tab) to-3p (ixfq) d g s d (tab) to-220ab (ixfp) s d g to-263 aa (ixfa) g s d (tab) preliminary technical information
ixys reserves the right to change limits, test conditions, and dimensions. ixfa20n50p3 ixfa20n50p3 ixfq20n50p3 IXFH20N50P3 ixys mosfets and igbts are covered 4,835,592 4,931,844 5,049,961 5,237,481 6,162,665 6,404,065 b1 6,683,344 6,727,585 7,005,734 b2 7,157,338b2 by one or more of the following u.s. patents: 4,860,072 5,017,508 5,063,307 5,381,025 6,259,123 b1 6,534,343 6,710,405 b2 6,759,692 7,063,975 b2 4,881,106 5,034,796 5,187,117 5,486,715 6,306,728 b1 6,583,505 6,710,463 6,771,478 b2 7,071,537 note 1. pulse test, t ? 300 ? s, duty cycle, d ? 2%. symbol test conditions characteristic values (t j = 25 ? c unless otherwise specified) min. typ. max. g fs v ds = 20v, i d = 0.5 ? i d25 , note 1 11 18 s c iss 1800 pf c oss v gs = 0v, v ds = 25v, f = 1mhz 230 pf c rss 8.3 pf r gi gate input resistance 2.3 ?? t d(on) 10 ns t r 5 ns t d(off) 43 ns t f 9 ns q g(on) 36 nc q gs v gs = 10v, v ds = 0.5 ? v dss , i d = 0.5 ? i d25 7 nc q gd 13 nc r thjc 0.36 ? c/w r thcs to-220 0.50 ???????? c/w to-247 & to-3p 0.25 ???????????? c/w source-drain diode symbol test conditions characteristic values (t j = 25 ? c unless otherwise specified) min. typ. max. i s v gs = 0v 20 a i sm repetitive, pulse width limited by t jm 80 a v sd i f = i s , v gs = 0v, note 1 1.4 v t rr 250 ns i rm 8.0 a q rm 0.6 c i f = 10a, -di/dt = 100a/ ? s v r = 100v, v gs = 0v resistive switching times v gs = 10v, v ds = 0.5 ? v dss , i d = 0.5 ? i d25 r g = 5 ? (external) prelimanary technical information the product presented herein is under development. the technical specifications offered are derived from a subjective evaluation of the design, based upon prior knowledge and experi- ence, and constitute a "considered reflection" of the anticipated result. ixys reserves the right to change limits, test conditions, and dimensions without notice.
? 2013 ixys corporation, all rights reserved ixfa20n50p3 ixfa20n50p3 ixfq20n50p3 IXFH20N50P3 fig. 1. output characteristics @ t j = 25oc 0 2 4 6 8 10 12 14 16 18 20 01234567 v ds - volts i d - amperes v gs = 10v 7v 5 v 5.5 v 6 v fig. 2. extended output characteristics @ t j = 25oc 0 5 10 15 20 25 30 35 40 45 0 5 10 15 20 25 30 v ds - volts i d - amperes v gs = 10v 8v 6 v 5 v 7 v fig. 3. output characteristics @ t j = 125oc 0 2 4 6 8 10 12 14 16 18 20 0 2 4 6 8 10121416 v ds - volts i d - amperes 4 v 6v 5v v gs = 10v 7v 4.5v fig. 4. r ds(on) normalized to i d = 10a value vs. junction temperature 0.2 0.6 1.0 1.4 1.8 2.2 2.6 3.0 3.4 -50 -25 0 25 50 75 100 125 150 t j - degrees centigrade r ds(on) - normalized v gs = 10v i d = 20a i d = 10a fig. 5. r ds(on) normalized to i d = 10a value vs. drain current 0.6 1.0 1.4 1.8 2.2 2.6 3.0 3.4 3.8 0 5 10 15 20 25 30 35 40 45 i d - amperes r ds(on) - normalized v gs = 10v t j = 125oc t j = 25oc fig. 6. maximum drain current vs. case temperature 0 4 8 12 16 20 24 -50 -25 0 25 50 75 100 125 150 t c - degrees centigrade i d - amperes
ixys reserves the right to change limits, test conditions, and dimensions. ixfa20n50p3 ixfa20n50p3 ixfq20n50p3 IXFH20N50P3 fig. 7. input admittance 0 2 4 6 8 10 12 14 16 18 20 3.03.54.04.55.05.56.06.5 v gs - volts i d - amperes t j = 125oc - 40oc 25oc fig. 8. transconductance 0 5 10 15 20 25 30 0246810121416182022 i d - amperes g f s - siemens t j = - 40oc 125oc 25oc fig. 9. forward voltage drop of intrinsic diode 0 10 20 30 40 50 60 0.3 0.4 0.5 0.6 0.7 0.8 0.9 1.0 1.1 v sd - volts i s - amperes t j = 125oc t j = 25oc fig. 10. gate charge 0 1 2 3 4 5 6 7 8 9 10 0 5 10 15 20 25 30 35 40 q g - nanocoulombs v gs - volts v ds = 250v i d = 10a i g = 10ma fig. 11. capacitance 1 10 100 1,000 10,000 0 5 10 15 20 25 30 35 40 v ds - volts capacitance - picofarads f = 1 mhz c iss c rss c oss fig. 12. forward-bias safe operating area 0.1 1 10 100 10 100 1,000 v ds - volts i d - amperes t j = 150oc t c = 25oc single pulse 100s 1ms r ds(on) limit
? 2013 ixys corporation, all rights reserved ixys ref: f_20n50p3(w5) 11-14-11 ixfa20n50p3 ixfa20n50p3 ixfq20n50p3 IXFH20N50P3 fig. 13. maximum transient thermal impedance 0.01 0.1 1 0.0001 0.001 0.01 0.1 1 10 pulse w idth - seconds z (th)jc - oc / w
ixys reserves the right to change limits, test conditions, and dimensions. ixfa20n50p3 ixfa20n50p3 ixfq20n50p3 IXFH20N50P3 to-3p outline e ?? p to-247 outline 1 2 3 terminals: 1 - gate 2 - drain 3 - source dim. millimeter inches min. max. min. max. a 4.7 5.3 .185 .209 a 1 2.2 2.54 .087 .102 a 2 2.2 2.6 .059 .098 b 1.0 1.4 .040 .055 b 1 1.65 2.13 .065 .084 b 2 2.87 3.12 .113 .123 c .4 .8 .016 .031 d 20.80 21.46 .819 .845 e 15.75 16.26 .610 .640 e 5.20 5.72 0.205 0.225 l 19.81 20.32 .780 .800 l1 4.50 .177 ? p 3.55 3.65 .140 .144 q 5.89 6.40 0.232 0.252 r 4.32 5.49 .170 .216 s 6.15 bsc 242 bsc to-220 outline pins: 1 - gate 2 - drain 3 - source to-263 outline dim. millimeter inches min. max. min. max. a 4.06 4.83 .160 .190 b 0.51 0.99 .020 .039 b2 1.14 1.40 .045 .055 c 0.40 0.74 .016 .029 c2 1.14 1.40 .045 .055 d 8.64 9.65 .340 .380 d1 8.00 8.89 .280 .320 e 9.65 10.41 .380 .405 e1 6.22 8.13 .270 .320 e 2.54 bsc .100 bsc l 14.61 15.88 .575 .625 l1 2.29 2.79 .090 .110 l2 1.02 1.40 .040 .055 l3 1.27 1.78 .050 .070 l4 0 0.13 0 .005 1. gate 2. drain 3. source 4. drain 1. gate 2. drain 3. source 4. drain
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